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| MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 J P K N - DIA. (4 TYP.) M M Q - M6 THD (3 TYP.) R TAB#110 t=0.5 L E H Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DY-12H is a 600V (VCES), 400 Ampere Dual IGBT Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 12 M G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.25 3.660.01 2.44 1.890.01 1.22 Max. 0.98 0.85 0.60 Millimeters 108.0 93.00.25 62.0 48.00.25 31.0 Max. 25.0 21.5 15.2 Dimensions J K L M N P Q R Inches 0.59 0.55 0.30 0.28 0.256 Dia. 0.24 M6 Metric 0.20 Millimeters 15.0 14.0 8.5 7.0 Dia. 6.5 6.0 M6 5.0 Sep.1998 MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25C, Tj 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM400DY-12H -40 to 150 -40 to 125 600 20 400 800* 400 800* 1500 1.96 ~ 2.94 1.96 ~ 2.94 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V IC = 400A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 300V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.1 2.15 1200 - Max. 1.0 0.5 7.5 2.8** - - 2.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 400A, diE/dt = -800A/s IE = 400A, diE/dt = -800A/s VCC = 300V, IC = 400A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 1.08 Max. 40 14 8 350 600 350 300 110 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.085 0.18 0.045 Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C Tj = 25oC VGE = 20V 15 12 600 11 600 4 3 400 10 400 2 200 7 200 9 8 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 200 400 600 800 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C Tj = 25C IC = 800A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Cies 8 101 Coes 6 IC = 400A 102 4 Cres 100 2 IC = 160A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) tf 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A 16 SWITCHING TIME, (ns) Irr VCC = 200V td(on) 12 102 102 t rr 101 VCC = 300V 8 tr VCC = 300V VGE = 15V RG = 1.6 Tj = 125C di/dt = -800A/sec Tj = 25C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400DY-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.085C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.18C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
Price & Availability of CM400DY-12H
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